Method for enlarging tip portion of a fin-shaped structure

ABSTRACT

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 15/691,703filed Aug. 30, 2017, and incorporated herein by reference in itsentirety.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The invention relates to a method for fabricating semiconductor device,and more particularly to a method of enlarging the tip portion offin-shaped structure.

2. Description of the Prior Art

With the trend in the industry being towards scaling down the size ofthe metal oxide semiconductor transistors (MOS), three-dimensional ornon-planar transistor technology, such as fin field effect transistortechnology (FinFET) has been developed to replace planar MOStransistors. Since the three-dimensional structure of a FinFET increasesthe overlapping area between the gate and the fin-shaped structure ofthe silicon substrate, the channel region can therefore be moreeffectively controlled. This way, the drain-induced barrier lowering(DIBL) effect and the short channel effect are reduced. The channelregion is also longer for an equivalent gate length, thus the currentbetween the source and the drain is increased. In addition, thethreshold voltage of the FinFET can be controlled by adjusting the workfunction of the gate.

As the semiconductor industry enters 10 nm node generation, theimportance of critical dimension (CD) of fin-shaped structure within adevice has increased significantly. In current fabrication process forFinFET device, the fin-shaped structures disposed on the core region andthe fin-shaped structures disposed on the input/output region preferablyshare same critical dimension. However, it has been noted that it wouldbe more desirable for the devices on core region to have greatercritical dimension for increasing the channel volume while it would bemore advantageous for devices on input/out region to have smallercritical dimension for improving short channel effect and the currentarchitecture clearly cannot satisfy the demand on both regions at thesame time. Hence, how to effectively resolve this issue has become animportant task in this field.

SUMMARY OF THE INVENTION

According to an embodiment of the present invention, a method forfabricating semiconductor device includes the steps of: providing asubstrate having a first region and a second region; forming a firstfin-shaped structure on the first region and a second fin-shapedstructure on the second region; forming a patterned mask on the secondregion; and performing a process to enlarge the first fin-shapedstructure so that the top surfaces of the first fin-shaped structure andthe second fin-shaped structure are different.

According to another aspect of the present invention, a semiconductordevice includes a substrate having a first region and a second regionand a first fin-shaped structure on the first region and a secondfin-shaped structure on the second region. Preferably, a bottom surfaceof the first fin-shaped structure is equal to a bottom surface of thesecond fin-shaped structure and a top surface of the first fin-shapedstructure is different from a top surface of the second fin-shapedstructure.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-6 illustrate a method for fabricating semiconductor deviceaccording to an embodiment of the present invention.

DETAILED DESCRIPTION

Referring to FIGS. 1-3, FIG. 1 is a top view illustrating a method forfabricating a semiconductor device according to an embodiment of thepresent invention, the left portion of FIG. 2 illustrates across-sectional view of FIG. 1 for fabricating the semiconductor devicealong the sectional line AA′, the right portion of FIG. 2 illustrates across-sectional view of FIG. 1 for fabricating the semiconductor devicealong the sectional line BB′, the left portion of FIG. 3 illustrates across-sectional view of FIG. 1 for fabricating the semiconductor devicealong the sectional line CC′, and the right portion of FIG. 3illustrates a cross-sectional view of FIG. 1 for fabricating thesemiconductor device along the sectional line DD′. As shown in FIGS.1-3, a substrate 12 such as a silicon substrate or silicon-on-insulator(SOI) substrate is first provided and a first region 14 and a secondregion 16 are defined on the substrate 12, in which the first region 14preferably being a core region used to fabricate active devices in thelater process while the second region 16 being an input/output regionused to connect active devices with peripheral devices.

Next, fin-shaped structures are formed on the substrate 12 includingforming first fin-shaped structures 18 on the first region 14 and secondfin-shaped structures 20 on the second region 16, and a shallow trenchisolation (STI) 22 is formed around the first fin-shaped structures 18and second fin-shaped structures 20. In this embodiment, the formationof the STI 22 could be accomplished by conducting a flowable chemicalvapor deposition (FCVD) process to form a silicon oxide layer on thesubstrate 12 and covering the fin-shaped structures 14 entirely. Next, achemical mechanical polishing (CMP) process along with an etchingprocess are conducted to remove part of the silicon oxide layer so thatthe top surface of the remaining silicon oxide is slightly lower thanthe top surface of the fin-shaped structures 14 for forming the STI 22.

As shown in FIG. 3, it should be noted that part of the first fin-shapedstructure 18 and part of the second fin-shaped structure 20 may beconsumed to form into silicon oxide during the formation of theinterfacial layer 32 thereby revealing different widths. For instance, atop portion 24 and a bottom portion 26 are preferably defined in each ofthe first fin-shaped structure 18 and second fin-shaped structure 20after the interfacial layer 32 is formed. Preferably, the intersectingpoint between the top portion 24 and bottom portion 26 on first region14 and second region 16 shown by the dotted line in FIG. 3 is even withthe top surface of the STI 26, and the bottom surface of each topportion 24 on first region 14 and second region 16 is less than the topsurface of each bottom portion 26 on first region 14 and second region16 respectively.

Preferably, each of the fin-shaped structures of this embodiment couldbe obtained by a sidewall image transfer (SIT) process. For instance, alayout pattern is first input into a computer system and is modifiedthrough suitable calculation. The modified layout is then defined in amask and further transferred to a layer of sacrificial layer on asubstrate through a photolithographic and an etching process. In thisway, several sacrificial layers distributed with a same spacing and of asame width are formed on a substrate. Each of the sacrificial layers maybe stripe-shaped. Subsequently, a deposition process and an etchingprocess are carried out such that spacers are formed on the sidewalls ofthe patterned sacrificial layers. In a next step, sacrificial layers canbe removed completely by performing an etching process. Through theetching process, the pattern defined by the spacers can be transferredinto the substrate underneath, and through additional fin cut processes,desirable pattern structures, such as stripe patterned fin-shapedstructures could be obtained.

Alternatively, the fin-shaped structures could also be obtained by firstforming a patterned mask (not shown) on the substrate, 12, and throughan etching process, the pattern of the patterned mask is transferred tothe substrate 12 to form the fin-shaped structures. Moreover, theformation of the fin-shaped structures could also be accomplished byfirst forming a patterned hard mask (not shown) on the substrate 12, anda semiconductor layer composed of silicon germanium is grown from thesubstrate 12 through exposed patterned hard mask via selective epitaxialgrowth process to form the corresponding fin-shaped structures. Theseapproaches for forming fin-shaped structure are all within the scope ofthe present invention.

Next, at least a gate structures or dummy gate including a first gatestructure 28 and a second gate structure 30 are formed on eachfin-shaped structure. In this embodiment, the formation of the firstgate structure 28 and second gate structure 30 could be accomplished bya gate first process, a high-k first approach from gate last process, ora high-k last approach from gate last process. Since this embodimentpertains to a high-k last approach, a gate dielectric layer orinterfacial layer, a gate material layer made of polysilicon, and aselective hard mask could be formed sequentially on the substrate 12,and a photo-etching process is then conducted by using a patternedresist (not shown) as mask to remove part of the gate material layer andpart of the gate dielectric layer through single or multiple etchingprocesses. After stripping the patterned resist, a first gate structure28 and second gate structure 30 each composed of a patterned interfaciallayer 32 and a patterned material layer 34 are formed on the firstfin-shaped structure 18 and second fin-shaped structure 20 respectively.

Next, at least a spacer 36 is formed on the sidewalls of the each of thefirst gate structure 28 and second gate structure 30, a source/drainregion 38 and/or epitaxial layer (not shown) is formed in the fin-shapedstructure adjacent to two sides of each spacer 36, and selectivesilicide layers (not shown) could be formed on the surface of thesource/drain regions 38. In this embodiment, the spacer 36 could be asingle spacer or a composite spacer, such as a spacer including but notlimited to for example an offset spacer and a main spacer. Preferably,the offset spacer and the main spacer could include same material ordifferent material while both the offset spacer and the main spacercould be made of material including but not limited to for example SiO₂,SiN, SiON, SiCN, or combination thereof. The source/drain regions 38could include n-type dopants or p-type dopants depending on the type ofdevice being fabricated.

Next, a contact etch stop layer (CESL) 40 is formed on the surface ofthe fin-shaped structures and covering the first gate structure 28 andthe second gate structure 30, and an interlayer dielectric (ILD) layer42 is formed on the CESL 40. Next, a planarizing process such as CMP isconducted to remove part of the ILD layer 42 and part of the CESL 40 forexposing the gate material layer 34 made of polysilicon, in which thetop surface of the gate material layer 34 is even with the top surfaceof the ILD layer 42.

Next, a replacement metal gate (RMG) process is conducted to transformthe first gate structure 18 and second gate structure 20 into metalgates. For instance, the RMG process could be accomplished by firstperforming a selective dry etching or wet etching process using etchantsincluding but not limited to for example ammonium hydroxide (NH₄OH) ortetramethylammonium hydroxide (TMAH) to remove the gate material layer34 and even interfacial layer 32 of first gate structure 18 and secondgate structure 20 for forming recesses 60 in the ILD layer 42.

Referring to FIGS. 4-6, FIGS. 4-6 illustrate a method for fabricatingsemiconductor device following FIG. 3. As shown in FIG. 4, a patternedmask 44 is then formed on the second region 16 including covering theILD layer 42 and first interfacial layer 32 on the second region 16while exposing the first fin-shaped structure 18 and STI 22 on the firstregion 14. Next, an etching process is conducted by using the patternedmask 44 as mask to remove the interfacial layer 32 on the first region14 and expose the top portion 24 of the fin-shaped structure 18.

Next, as shown in FIG. 5, the patterned mask 44 on the second region 16is removed completely, and a treatment process is conducted withoutforming additional patterned mask to enlarge the tip portion of thefirst fin-shaped structure 18 so that the top surface of the top portion24 of first fin-shaped structure 18 is different from the top surface ofthe top portion 24 of second fin-shaped structure 20. Specifically, thetreatment process preferably includes performing an epitaxial growthprocess to form a semiconductor layer 46 on the first fin-shapedstructure 18. Preferably, the semiconductor layer 46 and the firstfin-shaped structure 18 are made of same material so that thesemiconductor layer 46 and the original first fin-shaped structure 18are merged together to form a new top portion 24. In this embodiment,the semiconductor layer 46 and the first fin-shaped structure 18 arepreferably made of silicon. Nevertheless, according to an embodiment ofthe present invention, the semiconductor layer 46 and the firstfin-shaped structure 18 could also be made of different materialdepending on the demand of the process while both the semiconductorlayer 46 and first fin-shaped structure 18 could be selected from thegroup consisting of silicon, germanium (Ge), silicon germanium (SiGe),and silicon phosphide (SiP).

It should be noted that since the top portion 24 of the secondfin-shaped structure 20 on the second region 16 is covered by theinterfacial layer 32 before the aforementioned treatment process isconducted, the semiconductor layer 46 would only form on the top portion24 of first fin-shaped structure 18 on first region 14 but not on thetop portion 24 of second fin-shaped structure 20 on second region 16. Incontrast to the original top portions 24 of first fin-shaped structure18 and second fin-shaped structure 20 sharing same height and width asshown in FIG. 3, the new top portion 24 of first fin-shaped structure 18and the new top portion 24 of second fin-shaped structure 20 shown inFIG. 5 preferably sharing different heights and widths.

Viewing from a more detailed perspective as shown in FIG. 6, the bottomsurface of the new top portion 24 on the first region 14 is preferablygreater than the top surface of bottom portion 26 on first region 14,the bottom surface of the top portion 24 on the second region 16 howeveris less than the top surface of the bottom portion 26 on the secondregion 16, both the top surface and bottom surface of the top portion 24on the first region 14 are greater than both the top surface and bottomsurface of the top portion 24 on the second region 16, and the topsurface of the bottom portion 26 on the first region 14 is equal to thetop surface of the bottom portion 26 on the second region 16. In otherwords, only the surface area of the channel region on first fin-shapedstructure 18 covered and crossed by the gate structure on first region14 is increased thereby having increased channel width while the surfacearea and channel width on the second fin-shaped structure 20 covered andcrossed by the gate structure on second region 16 remains unchanged.

Next, as shown in FIG. 6, another interfacial layer 48 or gatedielectric layer (not shown) is formed on each of the first fin-shapedstructure 18 and second fin-shaped structure 20, a high-k dielectriclayer 50, a work function metal layer 52, and a low resistance metallayer 54 are formed in the recesses 60, and a planarizing process suchas CMP is conducted to remove part of low resistance metal layer 54,part of work function metal layer 52, and part of high-k dielectriclayer 50 to form a first metal gate 56 and second metal gate 58. In thisembodiment, the first metal gate 56 preferably includes an interfaciallayer 48 or gate dielectric layer, a U-shaped high-k dielectric layer50, a U-shaped work function metal layer 52, and a low resistance metallayer 54 and the second metal gate 58 preferably includes an interfaciallayer 32, another interfacial layer 48, a U-shaped high-k dielectriclayer 50, a U-shaped work function metal layer 52, and a low resistancemetal layer 54.

In this embodiment, the high-k dielectric layer 50 is preferablyselected from dielectric materials having dielectric constant (k value)larger than 4. For instance, the high-k dielectric layer 50 may beselected from hafnium oxide (HfO₂), hafnium silicon oxide (HfSiO₄),hafnium silicon oxynitride (HfSiON), aluminum oxide (Al₂O₃), lanthanumoxide (La₂O₃), tantalum oxide (Ta₂O₅), yttrium oxide (Y₂O₃), zirconiumoxide (ZrO₂), strontium titanate oxide (SrTiO₃), zirconium silicon oxide(ZrSiO₄), hafnium zirconium oxide (HfZrO₄), strontium bismuth tantalate(SrBi₂Ta₂O₉, SBT), lead zirconate titanate (PbZr_(x)Ti_(1-x)O₃, PZT),barium strontium titanate (Ba_(x)Sr_(1-x)TiO₃, BST) or a combinationthereof.

In this embodiment, the work function metal layer 52 is formed fortuning the work function of the metal gate in accordance with theconductivity of the device. For an NMOS transistor, the work functionmetal layer 52 having a work function ranging between 3.9 eV and 4.3 eVmay include titanium aluminide (TiAl), zirconium aluminide (ZrAl),tungsten aluminide (WAl), tantalum aluminide (TaAl), hafnium aluminide(HfAl), or titanium aluminum carbide (TiAlC), but it is not limitedthereto. For a PMOS transistor, the work function metal layer 52 havinga work function ranging between 4.8 eV and 5.2 eV may include titaniumnitride (TiN), tantalum nitride (TaN), tantalum carbide (TaC), but it isnot limited thereto. An optional barrier layer (not shown) could beformed between the work function metal layer 52 and the low resistancemetal layer 54, in which the material of the barrier layer may includetitanium (Ti), titanium nitride (TiN), tantalum (Ta) or tantalum nitride(TaN). Furthermore, the material of the low-resistance metal layer 54may include copper (Cu), aluminum (Al), titanium aluminum (TiAl), cobalttungsten phosphide (CoWP) or any combination thereof.

Overall, the present invention first forms fin-shaped structures on thecore region and input/output region on a semiconductor substrate, formsa patterned mask to cover the input/output region, and then performs atreatment process such as epitaxial growth process to form asemiconductor layer on the fin-shaped structure on core region toincrease the overall critical dimension of fin-shaped structure on thecore region thereby increasing channel width. Since the fin-shapedstructure on the input/output region is covered by the patterned maskduring the formation of semiconductor layer, the critical dimension ofthe fin-shaped structure on input/output region remains unchanged as thecritical dimension of the fin-shaped structure on core region isenlarged.

Typically, it would be desirable for the devices on core region to havegreater critical dimension to increase channel volume while it would beadvantageous for devices on input/out region to have smaller criticaldimension for improving short channel effect. By following theaforementioned approach for fabricating a semiconductor device thepresent invention is able to maintain the critical dimension offin-shaped structure on input/output region while increasing thecritical dimension of fin-shaped structure on the core region therebysatisfying the demands on both regions at the same time as well asboosting the overall performance of the device.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A method for fabricating semiconductor device,comprising: providing a substrate having a first region and a secondregion; forming a first fin-shaped structure on the first region and asecond fin-shaped structure on the second region; forming a patternedmask on the second region; and performing a process to enlarge the firstfin-shaped structure so that the top surfaces of the first fin-shapedstructure and the second fin-shaped structure are different.
 2. Themethod of claim 1, further comprising: forming a first interfacial layeron the first fin-shaped structure and the second fin-shaped structure;forming the patterned mask on the first interfacial layer on the secondregion; removing the first interfacial layer on the first region;removing the patterned mask on the second region; and forming a secondinterfacial layer on the first fin-shaped structure and the secondfin-shaped structure.
 3. The method of claim 1, further comprising:forming a first gate structure on the first fin-shaped structure and asecond gate structure on the second fin-shaped structure; forming aninterlayer dielectric (ILD) layer around the first gate structure andthe second gate structure; removing the first gate structure and thesecond gate structure to form a first recess and a second recess; andforming the patterned mask on the first interfacial layer on the secondregion after forming the first recess and the second recess.
 4. Themethod of claim 1, wherein each of the first fin-shaped structure andthe second fin-shaped structure comprises a top portion and a bottomportion, the method comprising: forming a shallow trench isolation (STI)around the bottom portions of the first fin-shaped structure and thesecond fin-shaped structure.
 5. The method of claim 4, wherein a bottomsurface of the top portion on the first region and a top surface of thebottom portion on the second region are even with a top surface of theSTI.
 6. The method of claim 4, wherein a bottom surface of the topportion on the first region is greater than a top surface of the bottomportion on the first region.
 7. The method of claim 4, wherein a bottomsurface of the top portion on the second region is less than a topsurface of the bottom portion on the second region.
 8. The method ofclaim 1, wherein a bottom surface of the first fin-shaped structure isequivalent to a bottom surface of the second fin-shaped structure. 9.The method of claim 1, wherein the process comprises performing anepitaxial growth process to form a semiconductor layer on the firstfin-shaped structure.
 10. The method of claim 9, wherein thesemiconductor layer and the first fin-shaped structure comprise samematerial.